1 item symbol ratings unit drain-source voltage v ds 600 v dsx *5 600 continuous drain current i d 17 pulsed drain current i d(puls] 68 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 17 maximum avalanche energy e as *1 412 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 3.125 tc=25 c 120 operating and storage t ch +150 temperature range t stg isolation voltage v iso *6 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sK3528-01r fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =8.5a v gs =10v i d =8.5a v ds =25v v cc =300v i d =8.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 1.042 40.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =300v i d =17a v gs =10v l=2.62mh t ch =25c i f =17a v gs =0v t ch =25c i f =17a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c kvrms 600 3.0 5.0 25 250 10 100 0.29 0.37 10 20 2280 3420 290 435 16 24 26 39 37 56 78 117 13 19 54 81 15 23 20 30 17 0.93 1.50 0.7 10.0 -55 to +150 outline drawings equivalent circuit schematic super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *1 l=2.62mh, vcc=60v *2 tch 150c = < *4 vds 600v *5 v gs =-30v *6 t=60sec f=60hz < = to-3pf gate(g) source(s) drain(d)
2 characteristics 2sK3528-01r fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 2 4 6 8 101214161820 0 5 10 15 20 25 30 35 40 45 20v 7.0v 10v 8v 6.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 5 10 15 20 25 30 35 40 45 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 6.0v vgs= 5.5v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=8.5a,vgs=10v
3 2sK3528-01r fuji power mosfet vgs=f(qg):id=17a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=300v, vgs=10v, rg=10 ? vgs(th)=f(tch):vds=vgs,id=250a -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th) [v] tch [ c] 0 20406080100120 0 2 4 6 8 10 12 14 16 18 20 22 24 vcc= 120v vcc= 480v qg [nc] typical gate charge characteristics vgs [v] vcc= 300v 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v,i(av)<=17a
4 2sK3528-01r fuji power mosfet i av =f(t av ):starting tch=25c. vcc=60v avalanche current i av [a] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=t/t,d=0 zth(ch-c) [ o c/w] t [sec] 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth t av [sec]
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